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The next generation of memory technology revolutionizing computing
Magnetoresistive Random Access Memory (MRAM) is a revolutionary non-volatile memory technology that combines the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory. Unlike traditional memory technologies, MRAM stores data using magnetic states rather than electrical charge, enabling instant-on computing, unlimited endurance, and exceptional reliability.
Driving the MRAM revolution forward
Spin-Transfer Torque MRAM is the dominant technology, offering exceptional scalability and energy efficiency. It uses spin-polarized current to switch magnetic states with minimal power consumption.
Spin-Orbit Torque MRAM represents the next evolution, providing even faster switching speeds and lower power consumption through advanced spin-orbit coupling effects.
The pioneering MRAM technology that established magnetic memory as viable for commercial applications, offering excellent reliability and radiation hardness.
MRAM is transforming industries worldwide
Smartphones, wearables, and IoT devices benefit from MRAM's instant-on capability and low power consumption, enabling always-on applications without battery drain.
ADAS systems, infotainment, and autonomous vehicles rely on MRAM for reliable data retention in extreme temperatures and harsh environments.
Industrial automation and edge computing leverage MRAM's robustness and endurance for mission-critical applications requiring decades of reliable operation.
Satellites and spacecraft use radiation-hardened MRAM for reliable operation in extreme environments where data integrity is paramount.
Data centers and servers utilize MRAM for low-latency persistent memory, enabling instant recovery and reducing power consumption.
Neural networks and edge AI benefit from MRAM's fast access times and non-volatility for efficient inference and training at the edge.
Companies driving MRAM innovation
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